US Air Force systems engineers, in conjunction with BAE Systems, are teaming to develop next-generation, short-gate gallium nitride (GaN) semiconductor technology that could prove critical to the service’s growing arsenal of radar, communications, and electronic warfare applications.
Officials from the Air Force Research Laboratory (AFRL) and BAE System’s FAST Labs research and development team are in Phase Two of an effort to transfer the 140 nanometre GaN monolithic microwave integrated circuit (MMIC) process technology to the company’s line of six-inch (15 cm) wafers, said David Brown, technology development manager with BAE System’s Electronic Warfare and Advanced Electronics directorate.
The integration of the 140 nanometre process into the six-inch wafer “will include optimising performance, ensuring process stability, and maximising wafer-to-wafer uniformity and wafer yields”, according to a company statement.
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