C4iSR: Joint & Common Equipment

AFRL’s flexible GaN could improve electronic systems

18 December 2017

The US Air Force Research Laboratory (AFRL) has demonstrated a new method to transfer gallium nitride (GaN) on a flexible substrate, a development that could lead to improved communications and radar systems, as well as wearable electronics.

GaN is a wide bandgap material that amplifies a signal to an antenna. It is typically grown on a rigid substrate such as sapphire; however, the process makes the finished product unable to withstand bending or straining, thus limiting its use to flat platforms.

Rigid GaN can offer anywhere between 5 and 10 times power enhancement. AFRL is aiming to replicate the same level of power with the flexible alternative.

Want to read more? For analysis on this article and access to all our insight content, please enquire about our subscription options at

(131 of 438 words)