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AFRL’s flexible GaN could improve electronic systems

18 December 2017

The US Air Force Research Laboratory (AFRL) has demonstrated a new method to transfer gallium nitride (GaN) on a flexible substrate, a development that could lead to improved communications and radar systems, as well as wearable electronics.

GaN is a wide bandgap material that amplifies a signal to an antenna. It is typically grown on a rigid substrate such as sapphire; however, the process makes the finished product unable to withstand bending or straining, thus limiting its use to flat platforms.

Rigid GaN can offer anywhere between 5 and 10 times power enhancement. AFRL is aiming to replicate the same level of power with the flexible alternative.

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